Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons
نویسندگان
چکیده
A. I. Tartakovskii,1 M. N. Makhonin,1,2 I. R. Sellers,1 J. Cahill,1 A. D. Andreev,3 D. M. Whittaker,1 J-P. R. Wells,1 A. M. Fox,1 D. J. Mowbray,1 M. S. Skolnick,1 K. M. Groom,4 M. J. Steer,4 H. Y. Liu,4 and M. Hopkinson4 1Department of Physics and Astronomy, University of Sheffield, S3 7RH, United Kingdom 2Institute of Solid State Physics, Chernogolovka, 142432, Russia 3Advanced Technology Institute, University of Surrey, Guildford, Surrey, United Kingdom 4Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom (Received 9 June 2004; published 5 November 2004)
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تاریخ انتشار 2004